무기재료화학연구실

For next-generation large-area electronics, the conventional Si-based material cannot afford the requirements of high flexibility, excellent performance, and cost-efficiency. As an alternative, the metal oxide semiconductor has been implemented for flat panel display with superior electron mobility (>10 cm2/Vs) and large area uniformity. However, the unipolar character (n-type only), insufficient mechanical stability, lack of multi-funtionality, and moderate carrier mobility hinder the further implementation of metal oxide into next generation large area electronics. Therefore, in combination of theoretical materials design, synthesis, and device fabrication, our group conducts research on developing elaborate oxide/hybrid materials, metal halide, and p-type TCE materials.