차세대 반도체 연구실

Metal halide perovskite semiconductors have demonstrated outstanding performance in optoelectronic devices such as solar cells, LEDs, and transistors, thanks to their excellent properties and ease of processing. In particular, they offer new possibilities for implementing CMOS circuits through low-cost, low-temperature processes, addressing the growing demand for high-mobility p-type semiconductors. 2D semiconductors exhibit unique characteristics that make them highly promising for next-generation electronic devices. With atomically thin layers, they enable excellent gate control even at ultra-short channel lengths, supporting continued transistor miniaturization. Their dangling-bond-free surfaces minimize interface trap states, allowing for high carrier mobility and low contact resistance, essential for improved device performance. Additionally, 2D semiconductors offer tunable electronic properties, such as adjustable bandgaps depending on layer thickness. Our research focuses on their potential for integration into flexible electronics, low-power devices, and 3D monolithic structures, highlight 2D semiconductors as a transformative material for future semiconductor technology.