전자현미경 연구실

The interfacial phase-change memory fabricated using a superlattice, a cross-stack of GeTe and Sb2Te3, can implement a phase transition from high-resistance to low-resistance without going through an amorphous state. This new device exhibits superior characteristics, such as faster phase-change rate, lower reset current, and higher cyclability compared to conventional phase-change memory. However, there are various opinions on the atomic arrangement of the high and low resistance states and the lattice structure model of the superlattice phase change memory, and there are no clearly proven observations. In this study, an in-situ transmission electron microscopy is used to reveal the structure of the superlattice as well as to investigate the phase transition mechanism. In addition, research on selectors to improve noise problems between cells as well as cells themselves is very important. The switching mechanism of the selector is being investigated using in-situ transmission electron microscopy. The ReRAM(resistive switching random access memory) is a memory device that stores information using a phenomenon that causes a change in the resistance through the formation and rupture of a conductive filament(CF) with a width of several nm. ReRAM, with its outstanding performance and similarity to the synaptic connection of neurons, is drawing attention as a new next-generation memory. Our group is testing a new material system for high-performance ReRAM and is analyzing devices using an in-situ TEM technique to elucidate the mechanism of resistance change and failure. In-situ electron microscopy (real-time observation technique) can provide dynamic information for understanding the relationship between the properties of the material and the microstructure by observing the c