Future Semiconductor Technology Lab. (FuST)

2) Another resistive switching mechanism is by charge trapping and detrapping, called electronic resistive switching. It has the advantage of high uniformity and low power consumption due to electrofoming-free device. We are studying physics and mechanism of carrier trapping and detrapping process, and, finally, establish a new model for charge trap memristor. 3) Memristor characteristics can be adjusted by not only memristive element itself but also another components, such as series and parallel resistors (i.e. voltage divider). We believe that the realization of high uniform, self-limited, and multilevel switching properties are possible using peripheral elements. Therefore, our goal is finding adjustable series and parallel resistance for achieving high performance memristor. Improvement of memeristor performance and reliability is also important object by selection suitable material and processing. The important performances of memristor are switching speed, retention time, endurance, uniformity, on/off ratio, and etc. Nowadays, oxide based memristors, which are TiOx, TaOx, NbOx and HfOx, are mostly used because of their high performances such as fast switching speed, long retention time, endurance and uniformity. We are studying to improve these performances based on each memristive mechanism or finding better materials. Uniformity is crucial for increasing reliability of memristor. The research about random diffusion, random direction filament growth, and constant set/reset state are valuable to achieve our goal. It is also considerble way to control conditions of thin film technology processing such as Atomic Layer deposition(ALD), sputtering, and other processing. we can find more industrially efficient method about cost, time and performance of memristor. Also