황철성 연구실

The emerging technology called in-memory-computing has received attention since data migration between memory and computing unit is unnecessary, enhancing data processing speed and eventually solving the bottleneck issue. Moreover, owing to its gradual conductance change, digital and analog logic-in-memory computing can be realized with ReRAM. Our group conducts research on logic device tuning with line resistance and local electrode engineering, designing system architecture, and improving reliability to enhance the logic in-memory computation efficiency.