Advanced Electronic Device & Energy Conversion System Lab

Dynamic Random-Access Memory (DRAM) is a volatile memory that stores data in the form of electric charges, with each cell consisting of a transistor and a capacitor. The transistor serves as a switch, while the capacitor stores charge to enable data recording and erasure. However, as semiconductor technology advances into the sub-20 nm regime, the increased cell density has brought critical challenges, including higher resistance in word and bit lines, interfacial oxidation, void formation in high-aspect-ratio structures, and vulnerability to electromigration, all of which degrade performance and reliability. To overcome these limitations, we propose a material and process strategy that introduces hybrid inorganic/organic interlayers on TiN electrodes to suppress oxidation and stabilize the work function, while incorporating low-resistance metals to minimize line resistance and contact resistance. This approach aims to establish a highly reliable, low-resistance interconnect architecture for DRAM cell transistors, thereby enhancing both the performance and operational lifetime of next-generation high-density DRAM. AEEL focuses on developing novel electronic devices and realizing advanced energy conversion systems including light harvesting devices, stretchable electronic devices, memory devices, and IoT sensors.