김규태 연구실

classical drift-diffusion model. We are interested in low-dimensional nano-materials such as graphene, TMDC 2D nano-materials, 1d nanowires, etc. Researching nanoscale electronic devices requires a deep understanding of principles, practical & systematic approaches, and a wealth of thought with trial and error. As model system, we put importance on the processes of the fabrication technique such as e-beam lithography, electrical characterization with the expertise of the principle of measurements. TMDC 2d materials are expected to be adopted as active channels in the nanoscale electronic devices. Let’s see the physics & the electronics of low dimensional nanoelectronic devices. By using e-beam lithography, we fabricate single individual nano-electronic devices with 1D or 2D nano-materials such as MoS2, ReS2, WS2, WSe2 so called TMDCs (Transition Metal Dichalcogenides). According to the IRDS (International Roadmap for Devices and Systems), TMDCs are expected to be used as channel materials of logic device together with ferroelectric gate insulators. The diverse electrical properties of 2D materials enlighten the value of the investigation as various component in an integrated circuit, we expect. We have accumulated our understanding on the electrical properties of low dimensional nanomaterials such as carbon nanotubes since 2002. And we have experiences with the top-down approaches of nano-electronic devices such as Si GAA (Gate-All-Around), FinFET and Junction-less Transistors in collaboration of internationally well-known institutes, IMEP. The fabrication processes of e-beam lithography are well established based on home-made programs of our lab. In short, as model systems, we still pursue understanding of electrical and device characteristics of low-dimensional nano-m