산화물 양자소재 연구실(OQML)

Oxide semiconductors with partially occupied d electrons (i.e., correlated oxides, VO₂, NbO₂, NdNiO₃ etc,..) have aroused great interest due to extreme sensitivity of electronic phase transition with external stimuli. Because of the sensitivity near the phase boundary, small changes in the crystal structures or charge density near a transition between competing phases can abruptly transform into different electronic phase, leading to large modulation in the electrical/optical/mechanical properties. In particular, alkaline earth stannates (ASnO₃) exhibiting the perovskite crystal structures have recently attracted much attention due to exceptionally high room-temperature electron mobility, room-temperature conductivity, high optical transparency in the visible range etc.. Despite superior properties of perovskite stannates, various defects are formed in ASnO₃ thin films; these defects limits device performances based on electron transport; multidimensional defect controls are required. Oxide/Quantum Materials Laboratory (OQML) are conducting collaborative research and development on the materials discovery and defect control of emerging oxide materials with high electron mobility. Emerging oxide materials with maximized properties can dramatically improve the performance of next-generation semiconductor devices and energy devices. The distinct properties of emerging oxides are key ingredients for future technology. The 4th industrial revolution refers to the establishment of a communication between devices and humans through the Internet of Things (IoT). Thus, sensor technology is the core element of the 4th industrial revolution. Above all, research on sensor based on highly sensitive semiconductor materials is essential in order to convert external input signals into e