지능형 반도체소재 연구실

Our group creates and engineers intelligent semiconductors for next-generation AI hardware. Leveraging these materials, we are working toward neuromorphic computing, edge intelligence, and beyond. We engineer next-generation intelligent semiconductors by precisely controlling the atomic structure of functional oxide thin films. Our focus includes tuning key phenomena—metal-insulator transitions, ferroelectricity, piezoelectricity, and dielectric properties—through advanced synthesis and defect engineering. These smart materials form the backbone of future adaptive electronics. We create neuromorphic devices that emulate diverse brain functions using oxide-based materials. By harnessing ion dynamics and resistive switching, we implement key brain-inspired behaviors directly in hardware. Our devices are optimized for ultra-low power and dense integration, paving the way for real-time, adaptive AI hardware. We develop multifunctional solid-state devices that seamlessly integrate sensing, processing, and memory within a single platform. These compact systems enable on-device AI for real-time learning without cloud dependency. Our work spans neuromorphic sensory interfaces, brain–machine interfaces, and energy-efficient AI platforms for robotics, wearables, and autonomous systems.