나노포토닉스 광전자 연구실

h-BN-based photonics: Recently, h-BN has attracted intensive research interest due to its wide range of outstanding properties exhibited in the fields of photonics and optoelectronics across various wavelengths. In our laboratory, we are interested in studying the optoelectronic properties of excitons, which can be generated through photoexcitation or electrical injection. Our studies focus on designing the device structure of electrically-driven light-emitting devices and photodetectors to study the behavior of excitons in h-BN and develop high-performance h-BN-based optoelectronic devices. h-BN-based electronics: h-BN has gained considerable attention as a resistive switching layer for memristive devices. In our laboratory, we concentrate on developing high-performance h-BN-based memristors, utilizing MOCVD-grown h-BN. We demonstrate wafer-scale h-BN-based memristors with a unique device structure that showcases outstanding memristive performance. Additionally, we address the ongoing challenges of conventional metal-oxide-based memristors with a fundamental study on switching phenomena. Micro LEDs have emerged as promising candidates for next-generation displays owing to their superior brightness, high contrast ratio, long lifetime, and rapid response time compared to LCD and OLED. However, there is a substantial decrease in the external quantum efficiency (EQE) as the size of µLED is reduced. One of the factors responsible for this reduction is the increase in the proportion of damaged sidewalls generated during the inductively coupled plasma (ICP) dry etching process. One of the main research goals is to investigate the efficiency reduction mechanism in micro LEDs and enhance their efficiency by identifying sidewall defects that depend on the conditions of the ICP e