EPID Lab

Stabilizing α, β, and ε(κ) phases through substrate selection, surface chemistry, temperature, and precursor design. EPID studies Ga₂O₃ as a complete materials platform—from precursor chemistry and polymorph selection to defects, interfaces, and transferable epitaxial layers. Our goal is to create the materials foundation for electronics that operate beyond today's voltage, temperature, and efficiency limits. We connect crystal chemistry, epitaxial growth, structural characterization, and defect physics. Each result informs the next growth cycle, moving Ga₂O₃ toward controllable, reproducible, and device-ready material. Controlling nucleation, orientation, thickness, alloy composition, and donor incorporation using MIST-CVD and MOCVD. Linking extended and point defects to transport, breakdown, trapping, and long-term device reliability. Complementary reactors let us explore chemistry rapidly, then translate the learning into uniform and scalable epitaxial layers. The properties of Ga₂O₃ depend strongly on its atomic arrangement. We compare growth windows, phase stability, strain, polarity, and defect formation across the three polymorph families most relevant to epitaxial electronics. Heteroepitaxy on c-plane sapphire, phase-pure growth windows, donor incorporation, and strain-aware defect control using MIST-CVD. Homo- and heteroepitaxial films, alloy and doping control, vertical device layers, and interface engineering for high-field power electronics. Phase stabilization, rotational-domain suppression, polarization-enabled heterostructures, and thin-film growth on crystalline templates. Atomic-scale images reveal where an epitaxial layer begins, how lattice mismatch is accommodated, and which defects propagate into the active material. We connect these observations to