반도체 소자 및 3차원 집적 연구실

We aim to bridge advanced semiconductor device physics with system-level integration to enable next-generation electronic platforms. Our mission is to pioneer cross-disciplinary research that integrates semiconductor devices, heterogeneous 3D integration, and circuit–system co-design to advance RF, power, and cryogenic electronics. We focus on heterogeneous 3D integration technologies that enable the vertical stacking and seamless integration of diverse materials and device platforms, including III–V semiconductors, Si CMOS, and advanced packaging substrates. By combining device, circuit, and system-level design, our research aims to overcome the limitations of conventional planar scaling, achieving high performance, energy efficiency, and functional density for next-generation computing, RF, and power systems.