양자 반도체 연구소

Columns are the material systems the group works with, ordered from metallic to insulating. Rows are levels of the work, from crystal growth through devices to review articles. Projects still in progress sit alongside the published papers. Select an entry for its full reference and a link to the paper. Arrows run from a result to the work that followed from it; dashed arrows link areas further apart. Dotted entries are projects and targets rather than papers. Smaller exploratory projects are left out. One platform — atomically precise growth — driving quantum light, ferroelectric low-power electronics, and cryogenic quantum hardware. Wafer-scale, phase-pure epitaxy with atomic-level interface control — MOCVD, source-confined CVD, and ML-guided growth. Manipulating quantum states of light and excitons in engineered 2D interfaces. Low-power and cryogenic nanoelectronics from 2D ferroelectric devices. Superconducting and topological hardware for quantum computing. Build site-defined emitters in 2D interfaces, then program them with ferroelectric fields. Site-defined single-photon sources from 0D/2D lateral heterostructures, with spatial confinement engineered to control spin and charge dynamics. Wafer-scale WS₂ targets high coherence; Mn doping adds local magnetic moments. Ferroelectric polarization creates spatially programmable bound excitons. Gate-modulated, field-dependent dynamics give dynamical control of quantum emission through field and doping. 2D ferroelectrics as a route to low-power and cryogenic nanoelectronics. 2D ferroelectrics (In₂Se₃, AlScN) gate semiconductor channels to build non-volatile ferroelectric FETs, steep-slope negative-capacitance transistors, and low-power memory — extensible to cryogenic nanoelectronics. InSe and In₂Se₃ host rich structural p