첨단플라즈마나노공정연구실

Selective Atomic Layer Etching (ALE): Achieving sub-nanometer precision and atomic-scale selectivity for complex 3D architectures. Cryogenic & Directional Etching: Leveraging low-T plasma chemistry and precise profile engineering (anisotropic/isotropic) for damage-free, HAR structures. Advanced Plasma Engineering: Optimization of VHF (30-162 MHz), Dual-frequency, and Pulsed plasma processes for seamless material integration. Expertise in leveraging single-crystalline 2D/3D materials for next-generation semiconductor architectures, focusing on logic-on-memory integration and heterogeneous material stacking to enable advanced multi-functional devices.